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NTB35N15
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V GS = 0 Vdc, V DS = 150 Vdc, T J = 25 ° C)
(V GS = 0 Vdc, V DS = 150 Vdc, T J = 125 ° C)
Gate?Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
150
?
?
?
?
?
240
?
?
?
?
?
5.0
50
± 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
V DS = V GS, I D = 250 m Adc)
Temperature Coefficient (Negative)
V GS(th)
2.0
?
2.9
?8.56
4.0
?
Vdc
mV/ ° C
Static Drain?to?Source On?State Resistance
R DS(on)
W
(V GS = 10 Vdc, I D = 18.5 Adc)
(V GS = 10 Vdc, I D = 18.5 Adc, T J = 125 ° C)
Drain?to?Source On?Voltage
(V GS = 10 Vdc, I D = 18.5 Adc)
V DS(on)
?
?
?
0.042
?
1.55
0.050
0.120
1.78
Vdc
Forward Transconductance (V DS = 10 Vdc, I D = 18.5 Adc)
g FS
?
26
?
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
2275
450
90
3200
650
175
pF
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn?On Delay Time
Rise Time
Turn?Off Delay Time
Fall Time
Total Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
(V DD = 120 Vdc, I D = 37 Adc,
V GS = 10 Vdc,
R G = 9.1 W )
(V DS = 120 Vdc, I D = 37 Adc,
V GS = 10 Vdc)
t d(on)
t r
t d(off)
t f
Q tot
Q gs
Q gd
?
?
?
?
?
?
?
20
125
90
120
70
14
32
35
225
175
210
100
?
?
ns
nC
BODY?DRAIN DIODE RATINGS (Note 3)
Diode Forward On?Voltage
Reverse Recovery Time
(I S = 37 Adc, V GS = 0 Vdc)
(I S = 37 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 37 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
?
?
?
?
1.00
0.88
170
112
1.5
?
?
?
Vdc
ns
t b
?
58
?
Reverse Recovery Stored Charge
Q RR
?
1.14
?
m C
3. Pulse Test: Pulse Width = 300 m s max, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperature.
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